FF200R12KT4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF200R12KT4HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
7
Operating Temperature
-40°C~150°C TJ
Published
2002
Series
C
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Pin Count
7
Number of Elements
2
Polarity
NPN
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1100W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
320A
Turn On Time
680 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Turn Off Time-Nom (toff)
700 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
14nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$57.778020
$57.77802
10
$54.507566
$545.07566
100
$51.422232
$5142.2232
500
$48.511540
$24255.77
1000
$45.765603
$45765.603
FF200R12KT4HOSA1 Product Details
FF200R12KT4HOSA1 Description
FF200R12KT4HOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF200R12KT4HOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 320A. The FF200R12KT4HOSA1 has 7 pins and it is available in Module packaging way. FF200R12KT4HOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF200R12KT4HOSA1 Features
Input Capacitance (Cies) @ Vce: 14nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Current - Collector (Ic) (Max): 320A
Current - Collector Cutoff (Max): 5mA
Voltage - Collector Emitter Breakdown (Max): 1200V