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FF225R12ME4BOSA1

  • FF225R12ME4BOSA1
  • FF225R12ME4BOSA1

FF225R12ME4BOSA1

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF225R12ME4BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Series EconoDUAL™ 3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 320A
Turn On Time 220 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
Turn Off Time-Nom (toff) 600 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $90.527200 $90.5272
10 $85.403019 $854.03019
100 $80.568886 $8056.8886
500 $76.008383 $38004.1915
1000 $71.706021 $71706.021
FF225R12ME4BOSA1 Product Details

FF225R12ME4BOSA1 Description


FF225R12ME4BOSA1 is a single IGBT with a break down voltage of 1200V from Infineon Technologies. FF225R12ME4BOSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 320A. The FF225R12ME4BOSA1 has 3 pins and it is available in Module packaging way. FF225R12ME4BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FF225R12ME4BOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A

  • IGBT Type: Trench Field Stop

  • Input Capacitance (Cies) @ Vce: 13nF @ 25V

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Operating Temperature: -40°C~150°C



FF225R12ME4BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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