FF225R17ME4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF225R17ME4PBPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2007
Series
EconoDUAL™ 3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
20mW
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
450A
Turn On Time
350 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 225A
Turn Off Time-Nom (toff)
1500 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
18.5nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$178.310272
$178.310272
10
$172.447071
$1724.47071
25
$171.248333
$4281.208325
50
$170.057928
$8502.8964
100
$166.560164
$16656.0164
500
$154.651963
$77325.9815
FF225R17ME4PBPSA1 Product Details
FF225R17ME4PBPSA1 Description
FF225R17ME4PBPSA1 is a type of EconoDUAL?3 module with Trench/Fieldstop IGBT4 and emitter-controlled diode and NTC/pre-applied thermal interface material. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the DF150R12RT4HOSA1 IGBT module provides optimum performance for motor drives, servo drives, and UPS systems.