FF400R12KE3B2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF400R12KE3B2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
762
Operating Temperature
-40°C~125°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Configuration
2 Independent
Element Configuration
Dual
Power - Max
2000W
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
580A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 400A
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$151.54900
$1515.49
FF400R12KE3B2HOSA1 Product Details
FF400R12KE3B2HOSA1 Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.
FF400R12KE3B2HOSA1 Features
·Fast: Optimized for medium operating
frequencies( 1-5 kHzin hard switching.>20 kHz in resonant mode).
·Generation 4 IGBT design provides tighter
parameter distribution and higher efficiencythan Generation3
·IGBT co-packaged with HEXFREDM ultrafast ultra-soft-recoveryanti-parallel diodes for use in bridge confiqurations