FF450R12KE4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF450R12KE4HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
7
Operating Temperature
-40°C~150°C TJ
Published
2008
Series
C
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Pin Count
7
Number of Elements
2
Polarity
NPN
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
2400W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
520A
Power Dissipation-Max (Abs)
2400W
Turn On Time
325 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 450A
Turn Off Time-Nom (toff)
800 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
28nF @ 25V
VCEsat-Max
2.15 V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$155.17000
$155.17
FF450R12KE4HOSA1 Product Details
FF450R12KE4HOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.