FF450R12ME4B11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF450R12ME4B11BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Packaging
Bulk
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
2 Independent
Element Configuration
Dual
Power - Max
2250W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
675A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 450A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$172.55667
$1035.34002
FF450R12ME4B11BPSA1 Product Details
FF450R12ME4B11BPSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.