APTGT100BB60T3G

new-10%

Manufacturer part number:APTGT100BB60T3G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 150A 340W SP3

Case Package:SOT-23

Datasheet:APTGT100BB60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Screw, Through Hole
Mounting Type	Through Hole
Package / Case	SP3
Number of Pins	16
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Number of Elements	1
Configuration	Half Bridge
Element Configuration	Dual
Power - Max	340W
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	150A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	6.1nF
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.1nF @ 25V
VCEsat-Max	1.9 V
RoHS Status	RoHS Compliant