FMG2G75US120                        Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

FMG2G75US120                       Applications

 Motor Drives

·Resonant Inverter Appliccations

Traction Drives

UPS Systems

·Wind Turbines

FMG2G75US120                      Features

·Extended Operation Temperature Tyjop

·High DC Stability

High Short Circuit CapabilitySelf Limiting Short Circuit Current

Low Switching Losses

Unbeatable Robustness

·VcEsatwith positive Temperature Coefficient

Mechanical Features

·4 kV AC 1min Insulation

·Package with CTI>400

·High Creepage and Clearance Distances

·High Power and Thermal Cycling Capability

·High Power Density

·Substrate for Low Thermal Resistance