FF600R12IS4F datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF600R12IS4F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
10
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
3700W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
600A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Power Dissipation-Max (Abs)
3700W
Turn On Time
270 ns
Vce(on) (Max) @ Vge, Ic
3.75V @ 15V, 600A
Turn Off Time-Nom (toff)
630 ns
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
39nF @ 25V
VCEsat-Max
3.75 V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3
$1,186.67333
$3
FF600R12IS4F Product Details
FF600R12IS4F Description
PrimePACK High Power IGBT modules are available in various topologies: chopper, half?bridge, single? and dual switch. The PrimePACK IGBT modules offer a specially optimized concept for integration in modern converters. The most important benefits are improved thermal? and electrical properties, low stray inductance, and high robustness.
The well-placed DC terminal screw connections on PrimePACK offer high flexibility for a parallel design to realize a broad power range of inverters and further contribute to low inductance inverter design.