APTGT150DU170G

new-10%

Manufacturer part number:APTGT150DU170G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.7KV 250A 7-Pin Case SP-6

Case Package:SOT-23

Datasheet:APTGT150DU170G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2006
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	890W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	7
JESD-30 Code	R-XUFM-X7
Number of Elements	2
Configuration	Dual, Common Source
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	890W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	250A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Input Capacitance	13.5nF
Turn On Time	450 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 150A
Turn Off Time-Nom (toff)	1100 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	13.5nF @ 25V
VCEsat-Max	2.4 V
RoHS Status	RoHS Compliant