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FF600R12ME4CBOSA1

  • FF600R12ME4CBOSA1
  • FF600R12ME4CBOSA1

FF600R12ME4CBOSA1

FF600R12ME4CBOSA1

Infineon Technologies

FF600R12ME4CBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF600R12ME4CBOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2002
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 4050W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 1.06kA
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1060A
Turn On Time 300 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Turn Off Time-Nom (toff) 710 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 37nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $240.60000 $240.6
FF600R12ME4CBOSA1 Product Details

FF600R12ME4CBOSA1 Description


FF600R12ME4CBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF600R12ME4CBOSA1 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 1060A. The FF600R12ME4CBOSA1 has 11 pins and it is available in Module packaging way. FF600R12ME4CBOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FF600R12ME4CBOSA1 Features


  • Operating Temperature: -40°C~150°C TJ

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A

  • Input Capacitance (Cies) @ Vce: 37nF @ 25V

  • Transistor Application: POWER CONTROL



FF600R12ME4CBOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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