FP15R12W1T7B3BOMA1                 Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

FP15R12W1T7B3BOMA1                 Features

? Electrical features

- TRENCHSTOPTM IGBT7

- Low VCEsat

- Overload operation up to 175°C

? Mechanical features

- 2.5 kV AC 1 min insulation

- High power density

- Solder contact technology

- Compact design

- Al2O3

 substrate with low thermal resistance

FP15R12W1T7B3BOMA1                 Applications

? Air conditioning

? Auxiliary inverters

? Motor drives