FF600R17ME4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF600R17ME4PBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Surface Mount
NO
Transistor Element Material
SILICON
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn On Time
320 ns
Collector Current-Max (IC)
950A
Turn Off Time-Nom (toff)
980 ns
Collector-Emitter Voltage-Max
1700V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$312.87167
$1877.23002
FF600R17ME4PBOSA1 Product Details
FF600R17ME4PBOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF600R17ME4PBOSA1 Applications
·Auxiliary inverters
·Motor drives
·Servo drives
FF600R17ME4PBOSA1 Features
Typische Anwendungen
·Hilfsumrichter
·Motorantriebe
·Servoumrichter
Elektrische Eigenschaften
·Niedrige Schaltverluste
·Niedriges VcEsat
·Tp=150℃
·VCEsat mit positivem Temperaturkoeffizienten
Mechanische Eigenschaften
·Hohe Last-und thermische Wechselfestigkeit
·Integrierter NTC Temperatur Sensor
·Kupferbodenplatte
·PressFIT Verbindungstechnik
·Standardgeh?use
·Thermisches Interface Material bereits aufgetrage