FF800R12KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF800R12KE3NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
130
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
10
JESD-30 Code
R-XUFM-X10
Number of Elements
2
Configuration
Single
Element Configuration
Dual
Power Dissipation
3.9kW
Case Connection
ISOLATED
Power - Max
3900W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
1.2kA
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
1200A
Collector Emitter Saturation Voltage
1.7V
Turn On Time
880 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 800A
Turn Off Time-Nom (toff)
1140 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
57nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$845.113399
$845.113399
10
$817.324370
$8173.2437
25
$811.642870
$20291.07175
50
$806.000864
$40300.0432
100
$789.422981
$78942.2981
500
$732.983270
$366491.635
FF800R12KE3NOSA1 Product Details
FF800R12KE3NOSA1 Description
The FF800R12KE3NOSA1 is a PrimePACK? 2 1200 V, 900 A dual IGBTmodule with TRENCHSTOP? IGBT4, Emitter Controlled 4 Diode, NTC and fast switching chip. Also available with pre-applied Thermal Interface Material.
FF800R12KE3NOSA1 Features
Extended operation temperature Tvj op
High DC stability
High short circuit capability, self-limiting short circuit current