DF200R12KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
DF200R12KE3HOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
Number of Elements
1
Configuration
Single
Power Dissipation
1.04kW
Case Connection
ISOLATED
Power - Max
1040W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
295A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Turn Off Time-Nom (toff)
830 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
14nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$633.366980
$633.36698
10
$597.516019
$5975.16019
100
$563.694358
$56369.4358
500
$531.787130
$265893.565
1000
$501.685972
$501685.972
DF200R12KE3HOSA1 Product Details
DF200R12KE3HOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.