FZ750R65KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FZ750R65KE3NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
9
Transistor Element Material
SILICON
Operating Temperature
-50°C~125°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
9
Number of Elements
3
Configuration
Single
Power - Max
14500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
6.5kV
Max Collector Current
750A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
6500V
Turn On Time
1200 ns
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 750A
Turn Off Time-Nom (toff)
8100 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
205nF @ 25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2,700.74000
$2
FZ750R65KE3NOSA1 Product Details
FZ750R65KE3NOSA1 Description
FZ750R65KE3NOSA1 is a type of highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply, and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.