FF800R17KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF800R17KE3NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
130
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
10
JESD-30 Code
R-XUFM-X10
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
4450W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
1.15kA
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Turn On Time
900 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 800A
Turn Off Time-Nom (toff)
1900 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
72nF @ 25V
Height
38mm
Length
140mm
Width
130mm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$839.20000
$1678.4
FF800R17KE3NOSA1 Product Details
FF800R17KE3NOSA1 Description
FF800R17KE3NOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF800R17KE3NOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.