FP75R17N3E4BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP75R17N3E4BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
35
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X35
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
555W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
125A
Turn On Time
305 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 75A
Turn Off Time-Nom (toff)
800 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.8nF @ 25V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
300
$169.22143
$50766.429
FP75R17N3E4BPSA1 Product Details
FP75R17N3E4BPSA1 Description
The FP75R17N3E4BPSA1 is an EconoPIM?3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC. An IGBT power module can be used to switch electrical power on and off very quickly and with a high level of energy efficiency. Because it can improve switching, temperature, weight, and cost performance, the IGBT power module is quickly replacing other devices in high-power applications.