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FS35R12KE3GBOSA1

FS35R12KE3GBOSA1

FS35R12KE3GBOSA1

Infineon Technologies

FS35R12KE3GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS35R12KE3GBOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Series EconoPACK™ 2
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 28
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 28
JESD-30 Code R-XUFM-X28
Qualification Status Not Qualified
Number of Elements 6
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 200W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 55A
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 35A
Turn Off Time-Nom (toff) 610 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $73.495167 $73.495167
10 $69.335063 $693.35063
100 $65.410437 $6541.0437
500 $61.707959 $30853.9795
1000 $58.215056 $58215.056
FS35R12KE3GBOSA1 Product Details

FS35R12KE3GBOSA1 Description


FS35R12KE3GBOSA1 is a 1200v IGBT-Modules. The FS35R12KE3GBOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Industrial, Grid infrastructure, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS35R12KE3GBOSA1 is in the tray package with 200W Power dissipation.



FS35R12KE3GBOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 55A

Repetitive peak collector current Tp = 1 ms: 70A

Total power dissipation Tc = 25°C: 200W

Gate-emitter peak voltage: ±20V



FS35R12KE3GBOSA1 Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Industrial 

Grid infrastructure 

Enterprise systems 

Enterprise projectors


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