FS35R12KE3GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS35R12KE3GBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Series
EconoPACK™ 2
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
28
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
28
JESD-30 Code
R-XUFM-X28
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
200W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
55A
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 35A
Turn Off Time-Nom (toff)
610 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.5nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$73.495167
$73.495167
10
$69.335063
$693.35063
100
$65.410437
$6541.0437
500
$61.707959
$30853.9795
1000
$58.215056
$58215.056
FS35R12KE3GBOSA1 Product Details
FS35R12KE3GBOSA1 Description
FS35R12KE3GBOSA1 is a 1200v IGBT-Modules. The FS35R12KE3GBOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Industrial, Grid infrastructure, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS35R12KE3GBOSA1 is in the tray package with 200W Power dissipation.
FS35R12KE3GBOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 55A