FP100R12KT4B11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP100R12KT4B11BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
35
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
515W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
100A
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 100A
Turn Off Time-Nom (toff)
620 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
6.3nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$243.081978
$243.081978
10
$235.088954
$2350.88954
25
$233.454770
$5836.36925
50
$231.831947
$11591.59735
100
$227.063611
$22706.3611
500
$210.829722
$105414.861
FP100R12KT4B11BOSA1 Product Details
FP100R12KT4B11BOSA1 Description
FP100R12KT4B11BOSA1 is a type of EconoPIM?3 module with fastTrench/Fieldstop IGBT 4 and emitter controlled 4 diode and NTC. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.