FS150R17N3E4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS150R17N3E4BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
Three Phase Inverter
Power - Max
835W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
150A
Power Dissipation-Max (Abs)
835W
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 150A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
13.5nF @ 25V
VCEsat-Max
2.3 V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$195.49500
$1954.95
FS150R17N3E4BOSA1 Product Details
FS150R17N3E4BOSA1 Description
FS150R17N3E4BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FS150R17N3E4BOSA1 IGBT module provides optimum performance for motor drives and UPS systems.