FS50R07N2E4B11BOSA1                    Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FS50R07N2E4B11BOSA1                     Applications

·Medium voltage converters

·Traction drives

FS50R07N2E4B11BOSA1                    Features

·Low VcEsat

Mechanical Features

·AlSiC base plate for increased thermal cycling capability

*Extended storage temperature down to Tstg= -55°℃

·Package with CTI>600

·Package with enhanced insulation of 10.4kV AC10s

·High creepage and clearance distances