FP10R12W1T4B29BOMA1                    Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

FP10R12W1T4B29BOMA1                    Applications

·High power converters

·Motor drives

FP10R12W1T4B29BOMA1                     Features

·Extended operating temperature Tvjop

·Low switching losses

Mechanical Features

·Package with CTI>400·High power density

·IHM B housing

·RoHS compliant

·Pre-applied Thermal Interface Material