FP15R12W1T4B11BOMA1 Description

FP15R12W1T4B11BOMA1 is a 1200v IGBT-Modules. The FP15R12W1T4B11BOMA1 can be applied in Automotive, Infotainment & cluster, Enterprise systems, Communications equipment, Datacom module, and Personal electronics applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP10R12KE3BOMA1 is in the tray package with 165W Power dissipation.

FP15R12W1T4B11BOMA1 Features

Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 175°C: 28A

Repetitive peak collector current Tp = 1 ms: 30A

Total power dissipation Tc = 25°C: 130W

Gate-emitter peak voltage: ±20V

FP15R12W1T4B11BOMA1 Applications

Automotive 

Infotainment & cluster 

Communications equipment 

Datacom module 

Personal electronics 

Connected peripherals & printers