FP25R12KT4BOSA1 Description

FP25R12KT4BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP25R12KT4BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 25A. The FP25R12KT4BOSA1 has 23 pins and it is available in Module packaging way. FP25R12KT4BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FP25R12KT4BOSA1 Features

• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A

• Input Capacitance (Cies) @ Vce: 1.45nF @ 25V

• Voltage - Collector Emitter Breakdown (Max): 1200V

• Turn Off Time-Nom (toff): 620 ns

• Operating Temperature: -40°C~150°C

FP25R12KT4BOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial