FS150R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS150R12KT4BOSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
35
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Qualification Status
Not Qualified
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
750W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
150A
Power Dissipation-Max (Abs)
750W
Turn On Time
165 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 150A
Turn Off Time-Nom (toff)
605 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Gate-Emitter Voltage-Max
20V
VCEsat-Max
2.1 V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$64.961600
$64.9616
10
$61.284528
$612.84528
100
$57.815593
$5781.5593
500
$54.543012
$27271.506
1000
$51.455672
$51455.672
FS150R12KT4BOSA1 Product Details
FS150R12KT4BOSA1 Description
FS150R12KT4BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module PressFIT with trench/fieldstop IGBT4 and emitter controlled4 diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.