MWI50-12T7T

new-10%

Manufacturer part number:MWI50-12T7T

Manufacturer:IXYS

Description:IGBT MODULE 1200V 80A 270W E2

Case Package:SOT-23

Datasheet:MWI50-12T7T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E2
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	270W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MWI
Pin Count	28
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	270W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.15V
Max Collector Current	80A
Current - Collector Cutoff (Max)	4mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.5nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 50A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	3.5nF @ 25V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free