APTGT100DH60TG

new-10%

Manufacturer part number:APTGT100DH60TG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 150A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTGT100DH60TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	20
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	14
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	14
JESD-30 Code	R-XUFM-X14
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	340W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	150A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	6.1nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	6.1nF @ 25V
VCEsat-Max	1.9 V
RoHS Status	RoHS Compliant