FP35R12W2T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FP35R12W2T4PBPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
EasyPIM™ 2B
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
23
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X23
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
20mW
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
70A
Turn On Time
43 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 35A
Turn Off Time-Nom (toff)
510 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$61.215879
$61.215879
10
$57.750829
$577.50829
100
$54.481914
$5448.1914
500
$51.398032
$25699.016
1000
$48.488710
$48488.71
FP35R12W2T4PBPSA1 Product Details
FP35R12W2T4PBPSA1 Description
FP35R12W2T4PBPSA1 is a single IGBT with a breakdown voltage of 1200V from Infineon Technologies. FP35R12W2T4PBPSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 70A. The FP35R12W2T4PBPSA1 has 3 pins and it is available in Module packaging way. FP35R12W2T4PBPSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FP35R12W2T4PBPSA1 Features
Voltage - Collector Emitter Breakdown (Max): 1200V