FZ2400R12HE4B9HOSA2 Description

The FZ2400R12HE4B9HOSA2 is an IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.

FZ2400R12HE4B9HOSA2 Features

• Electrical Features

• Extended operating temperature Tvjop

• Low switching losses

• Mechanical Features

• IHM B housing

• High power density

• Package with CTI>400

FZ2400R12HE4B9HOSA2 Applications

• High power converters

• Motor drives

• As a switch

• Switch electrical power