FZ3600R17HP4HOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ3600R17HP4HOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
9
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X3
Number of Elements
3
Configuration
Single Switch
Case Connection
ISOLATED
Power - Max
21000W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
3.6kA
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
3600A
Turn On Time
1075 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 3600A
Turn Off Time-Nom (toff)
2095 ns
IGBT Type
Trench
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
295nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FZ3600R17HP4HOSA2 Product Details
FZ3600R17HP4HOSA2 Description
FZ3600R17HP4HOSA2 is a type of IHM-B module with a Trench/Fieldstop IGBT4 and emitter-controlled diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FZ3600R17HP4HOSA2 IGBT module provides optimum performance for high-power converters, motor drives, and more.