FP50R12KT4GB15BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FP50R12KT4GB15BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
35
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
35
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
280W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Max Collector Current
25A
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
50A
Turn On Time
210 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 50A
Turn Off Time-Nom (toff)
620 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.8nF @ 25V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$126.260562
$126.260562
10
$119.113738
$1191.13738
100
$112.371451
$11237.1451
500
$106.010803
$53005.4015
1000
$100.010191
$100010.191
FP50R12KT4GB15BOSA1 Product Details
FP50R12KT4GB15BOSA1 Description
FP50R12KT4GB15BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP50R12KT4GB15BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 25A. The FP50R12KT4GB15BOSA1 has 35 pins and it is available in Module packaging way. FP50R12KT4GB15BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FP50R12KT4GB15BOSA1 Features
Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max): 1200V