Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FP50R12KT4GB15BOSA1

FP50R12KT4GB15BOSA1

FP50R12KT4GB15BOSA1

Infineon Technologies

FP50R12KT4GB15BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP50R12KT4GB15BOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 35
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 35
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 280W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Max Collector Current 25A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 50A
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn Off Time-Nom (toff) 620 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $126.260562 $126.260562
10 $119.113738 $1191.13738
100 $112.371451 $11237.1451
500 $106.010803 $53005.4015
1000 $100.010191 $100010.191
FP50R12KT4GB15BOSA1 Product Details

FP50R12KT4GB15BOSA1 Description


FP50R12KT4GB15BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP50R12KT4GB15BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 25A. The FP50R12KT4GB15BOSA1 has 35 pins and it is available in Module packaging way. FP50R12KT4GB15BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FP50R12KT4GB15BOSA1 Features


  • Input Capacitance (Cies) @ Vce: 2.8nF @ 25V

  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Max Collector Current: 25A

  • Operating Temperature: -40°C~150°C



FP50R12KT4GB15BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News