FS100R12KS4BOSA1 Description

FS100R12KS4BOSA1 is an IGBT-Module. The transistor FS100R12KS4BOSA1 can be applied in  Automotive, Hybrid, electric & powertrain systems, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FS100R12KS4BOSA1 is in the tray package with 660W Power dissipation.

FS100R12KS4BOSA1 Features

Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C : 130A

Repetitive peak collector current Tp = 1 ms: 200A

Total power dissipation Tc = 25°C: 660W

Gate-emitter peak voltage: ±20V

FS100R12KS4BOSA1 Applications

Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Home theater & entertainment