APTGT150A60T1G

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Manufacturer part number:APTGT150A60T1G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 225A 480W SP1

Case Package:SOT-23

Datasheet:APTGT150A60T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2007
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	480W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	480W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	225A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	9.2nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 150A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	9.2nF @ 25V
VCEsat-Max	1.9 V
RoHS Status	RoHS Compliant