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FP75R12KE3BOSA1

  • FP75R12KE3BOSA1
  • FP75R12KE3BOSA1

FP75R12KE3BOSA1

FP75R12KE3BOSA1

Infineon Technologies

FP75R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP75R12KE3BOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 24
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Number of Elements 7
Polarity NPN
Configuration Single
Power Dissipation 350W
Case Connection ISOLATED
Power - Max 355W
Forward Current 75A
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 105A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 330 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
Height 17mm
Length 122mm
Width 62mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $36.444000 $36.444
10 $34.381132 $343.81132
100 $32.435030 $3243.503
500 $30.599085 $15299.5425
1000 $28.867061 $28867.061
FP75R12KE3BOSA1 Product Details

FP75R12KE3BOSA1 Description


FP75R12KE3BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP75R12KE3BOSA1 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 105A. The FP75R12KE3BOSA1 has 35 pins and it is available in Module packaging way. FP75R12KE3BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FP75R12KE3BOSA1 Features


  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Current - Collector Cutoff (Max): 5mA

  • Input Capacitance (Cies) @ Vce: 5.3nF @ 25V

  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A

  • Collector Emitter Breakdown Voltage: 1.2kV



FP75R12KE3BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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