APTGT35H120T3G

new-10%

Manufacturer part number:APTGT35H120T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT35H120T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	208W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	208W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	55A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.5nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	2.5nF @ 25V
Radiation Hardening	No
RoHS Status	RoHS Compliant