FP15R12KE3BOMA1 Description

FP15R12KE3BOMA1 is a IGBT-Module. The transistor FP15R12KE3BOMA1 can be applied in  Automotive, Hybrid, electric & powertrain systems, Communications equipment, Datacom module, Enterprise systems, and Enterprise projectors applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP15R12KE3BOMA1 is in the tray package with 89W Power dissipation.

FP15R12KE3BOMA1 Features

Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C : 27A

Repetitive peak collector current Tp = 1 ms: 30A

Total power dissipation Tc = 25°C: 89W

Gate-emitter peak voltage: ±20V

FP15R12KE3BOMA1 Applications

Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Datacom module 

Enterprise systems 

Enterprise projectors