FS20R06XL4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FS20R06XL4BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~125°C
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Vendor Undefined
Configuration
Three Phase Inverter
Power - Max
89W
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
26A
Vce(on) (Max) @ Vge, Ic
2.55V @ 15V, 20A
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
900pF @ 25V
FS20R06XL4BOMA1 Product Details
FS20R06XL4BOMA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FS20R06XL4BOMA1 Features
·Extended Operation Temperature Tyop
·High DC Stability
·High Short Circuit CapabilitySelf Limiting Short Circuit Current