FS225R12OE4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS225R12OE4PBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
29
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X29
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
20mW
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
350A
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
450A
Turn On Time
230 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 225A
Turn Off Time-Nom (toff)
570 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
13nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$493.798436
$493.798436
10
$477.561350
$4775.6135
25
$474.241659
$11856.041475
50
$470.945043
$23547.25215
100
$461.258613
$46125.8613
500
$428.280977
$214140.4885
FS225R12OE4PBOSA1 Product Details
FS225R12OE4PBOSA1 Description
The FS225R12OE4PBOSA1 is an EconoPACK? + D-series 1200 V, 225 A six-pack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 3 diode, NTC and PressFIT Contact Technology and pre-applied Thermal Interface Material.