NXH100B120H3Q0STG Description

NXH100B120H3Q0STG is a type of power module containing a dual boost stage. The integrated field stop trench IGBTs and low reverse recovery and fast switching SiC diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Based on its sepcific characteristics, the NXH100B120H3Q0STG IGBT power module is well suited for solar inverter, uninterruptible power supplies, and energy storage systems.

NXH100B120H3Q0STG Features

Low reverse recovery and fast switching SiC diodes

Lower conduction losses and switching losses

1200 V ultra field stop IGBTs

Low inductive layout

NXH100B120H3Q0STG Applications

Solar inverter

Uninterruptible power supplies

Energy storage systems