APTGT50TDU60PG

new-10%

Manufacturer part number:APTGT50TDU60PG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 80A 21-Pin Case SP-6P

Case Package:SOT-23

Datasheet:APTGT50TDU60PG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	21
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	21
Number of Elements	6
Configuration	Triple, Dual - Common Source
Case Connection	ISOLATED
Power - Max	176W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	3.15nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.15nF @ 25V
VCEsat-Max	1.9 V
RoHS Status	RoHS Compliant