APTGT200DA60T3AG

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Manufacturer part number:APTGT200DA60T3AG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 290A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT200DA60T3AG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	32
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	750W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	750W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	290A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	12.3nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 200A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	12.3nF @ 25V
VCEsat-Max	1.9 V
RoHS Status	RoHS Compliant