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FD200R12KE3PHOSA1

FD200R12KE3PHOSA1

FD200R12KE3PHOSA1

Infineon Technologies

FD200R12KE3PHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FD200R12KE3PHOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
8 $114.16625 $913.33
FD200R12KE3PHOSA1 Product Details

FD200R12KE3PHOSA1 Description


FD200R12KE3PHOSA1 62mm C-series module with the fast trench/fieldstop IGBT3 and emitter-controlled high-efficiency diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FD200R12KE3PHOSA1 IGBT module provides optimum performance for motor drives, high-frequency switching applications, and UPS systems.



FD200R12KE3PHOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



FD200R12KE3PHOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles 

New energy equipment


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