FD200R12KE3PHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD200R12KE3PHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X5
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
200A
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Turn Off Time-Nom (toff)
830 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
14nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
8
$114.16625
$913.33
FD200R12KE3PHOSA1 Product Details
FD200R12KE3PHOSA1 Description
FD200R12KE3PHOSA1 62mm C-series module with the fast trench/fieldstop IGBT3 and emitter-controlled high-efficiency diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FD200R12KE3PHOSA1 IGBT module provides optimum performance for motor drives, high-frequency switching applications, and UPS systems.