FS75R07W2E3B11ABOMA1                            Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

FS75R07W2E3B11ABOMA1                          Applications

·Hybrid Electrical Vehicles(H)EV

·Air Conditioning

·Motor Drives

Electrical Features

·Increased blocking voltage capabilityto650V

·Low Switching Losses

·Low VCEsat

·Trench IGBT 3

FS75R07W2E3B11ABOMA1                         Features

·Al2O3 Substrate with Low Thermal Resistance

·High Power Density

Integrated NTC temperature sensor Compact design

·PressFIT Contact Technology

·RoHS compliant

·Rugged mounting due to integrated mounting clamps