FZ3600R17HP4B2BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ3600R17HP4B2BOSA2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mount
Screw
Package / Case
Module
Number of Pins
9
Published
2002
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Power Dissipation
21kW
Halogen Free
Not Halogen Free
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
3.6kA
Collector Emitter Saturation Voltage
2.25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1,641.76000
$1
FZ3600R17HP4B2BOSA2 Product Details
FZ3600R17HP4B2BOSA2 Description
FZ3600R17HP4B2BOSA2 is a type of IHM-B module with a Trench/Fieldstop IGBT4 and emitter-controlled diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FZ3600R17HP4B2BOSA2 IGBT module provides optimum performance for resonant inverter applications, high-power converters, traction drives, and wind turbines.