FS150R12KE3GBOSA1                        Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO?247?4L package that provides significant reduction in Eon Losses compared to standard TO?247?3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.

FS150R12KE3GBOSA1                        Features

? Extremely Efficient Trench with Field Stop Technology

? TJmax = 175°C

? Improved Gate Control Lowers Switching Losses

? Separate Emitter Drive Pin

? TO?247?4L for Minimal Eon Losses

? Optimized for High Speed Switching

? These are Pb?Free Devices

FS150R12KE3GBOSA1                         Applications

? Solar Inverter

? Uninterruptible Power Inverter Supplies (UPS)

? Neutral Point Clamp Topology