FS75R12KS4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS75R12KS4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
19
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
39
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
39
JESD-30 Code
R-XUFM-X39
Number of Elements
6
Configuration
Three Phase Inverter
Power Dissipation
500W
Case Connection
ISOLATED
Power - Max
500W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
100A
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
3.2V
Turn On Time
190 ns
Vce(on) (Max) @ Vge, Ic
3.7V @ 15V, 75A
Turn Off Time-Nom (toff)
390 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
5.1nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$173.58000
$1735.8
FS75R12KS4BOSA1 Product Details
FS75R12KS4BOSA1 Description
FS75R12KS4BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FS75R12KS4BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.