FS75R12W2T4B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS75R12W2T4B11BOMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Number of Pins
18
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
18
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
6
Configuration
Full Bridge
Power - Max
375W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
107A
Turn On Time
185 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 75A
Turn Off Time-Nom (toff)
490 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
4.3nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
15
$57.56733
$863.50995
FS75R12W2T4B11BOMA1 Product Details
FS75R12W2T4B11BOMA1 Description
FS75R12W2T4B11BOMA1 is a 1200v IGBT-Modules. The FS75R12W2T4B11BOMA1 can be applied in Air Conditioning, Motor Drives, Servo Drives, and UPS Systems applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS75R12W2T4B11BOMA1 is in the tray package with 375W Power dissipation.