FZ2400R17HP4B2BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ2400R17HP4B2BOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
Max Power Dissipation
14kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
13000W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
2.4kA
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
4800A
Turn On Time
930 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 2400A
Turn Off Time-Nom (toff)
1810 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
195nF @ 25V
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FZ2400R17HP4B2BOSA2 Product Details
FZ2400R17HP4B2BOSA2 Description
FZ2400R17HP4B2BOSA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FZ2400R17HP4B2BOSA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.