FS800R07A2E3B31BOSA1 Description

FS800R07A2E3B31BOSA1 is a HybridPACK?2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC. The transistor FS800R07A2E3B31BOSA1 can be applied in Automotive Applications, Hybrid Electrical Vehicles (H) EVs, Commercial Agriculture Vehicles, and Motor Drive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS800R07A2E3B31BOSA1 is in the tray package with 1550W Power dissipation.

FS800R07A2E3B31BOSA1 Features

Increased blocking voltage capability to 650V

Extended Operation Temperature Tvj op

High Current Density

Low Inductive Design

Low Switching Losses

Low VCcsat

Tvj op= 150°C

Tvj op= 175°C

Trench IGBT 3

Vcesat with positive Temperature Coefficient

FS800R07A2E3B31BOSA1 Applications

Automotive Applications

Hybrid Electrical Vehicles (H)EV

Commercial Agriculture Vehicles

Motor Drives